tic246b, tic246c, TIC246D, tic246e, tic246m, tic246n, tic246s 30/10/2012 comset semiconductors 1 | 3 semiconductors silicon bidirectional triode thyristor ? high current triacs ? 16 a rms ? 70 a peak ? glass passivated wafer ? 200 v to 800 v off-state voltage ? max i gt of 50 ma (quadrants 1-3) ? 125 a peak current ? compliance to rohs description this device is a bidirectional triode thyristor (tri ac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main terminal 2 at either polarity. absolute maximum ratings symbol ratings value unit b c d e m s n v drm repetitive peak off-state voltage (see note1) 200 300 400 500 600 700 800 v i t(rms) full-cycle rms on-state current at (or below) 70c case temperature (see note2) 16 a i tsm peak on-state surge current full-sine-wave (see note3) 125 a i gm peak gate current 1 a t c operating case temperature range -40 to +110 c t st g storage temperature range -40 to +125 c t l lead temperature 1.6 mm from case for 10 seconds 230 c thermal characteristics symbol ratings value unit r ? jc junction to case thermal resistance 1.9 c/w r ? ja junction to free air thermal resistance 62.5
tic246b, tic246c, TIC246D, tic246e, tic246m, tic246n, tic246s 30/10/2012 comset semiconductors 2 | 3 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i drm repetitive peak off-state current v d = rated v drm , , i g = 0 t c = 110c - - 2 ma i gt gate trigger current v su pp l y = +12 v?, r l = 10 ? , t p(g) = > 20 s - 12 50 ma v su pp l y = +12 v?, r l = 10 ? , t p(g) = > 20 s - -19 -50 v su pp l y = -12 v?, r l = 10 ? , t p(g) = > 20 s - -16 -50 v su p p l y = -12 v?, r l = 10 ? , t p(g) = > 20 s - 34 - v gt gate trigger voltage v su pp l y = +12 v?, r l = 10 ? , t p(g) = > 20 s - 0.8 2 v v su pp l y = +12 v?, r l = 10 ? , t p(g) = > 20 s - -0.8 -2 v su pp l y = -12 v?, r l = 10 ? , t p(g) = > 20 s - -0.8 -2 v su p p l y = -12 v?, r l = 10 ? , t p(g) = > 20 s - 0.9 2 i h holding current v supply = +12 v?, i g = 0 initiating i tm = 100 ma - 22 40 ma v supply = -12 v?, i g = 0 initiating i tm = -100 ma - -22 -40 i l latching current v su pp l y = +12 v? (seenote5) - - 80 ma v su pp l y = -12 v? (seenote5) - - -80 v tm peak on-state voltage i tm = 22.5 a, i g = 50 ma (see note4) - 1.4 1.7 v dv/dt critical rate of rise of off-state voltage v drm = rated v drm , i g = 0 t c = 110c - 400 - v/s di/dt critical rate of rise of off-state current v drm = rated v drm , i gt = 50 ma di g /dt = 50ma/s, t c = 110c - 100 - a/s dv/dt ? critical rise of communication voltage v drm = rated v drm , i t = 1.4 i t(rms) di/dt = 0.5 i t(rms) /ms, t c = 80c 1.2 9 - v/s ? all voltages are whit respect to main terminal 1. notes: 1. these values apply bidirectionally for any value of resistance between the gate and main terminal 1. 2. this value applies for 50-hz full-sine-wave operatio n with resistive load. above 70c derate linearly to 110c case temperature at the rate of 400 ma/c. 3. this value applies for one 50-hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state curr ent. surge may be repeated after the device has returned to original thermal equilibrium. 4. this parameters must be measured using pulse techniques, t w = 1ms, duty cycle 2 %, voltage- sensing contacts, separate from the courrent-c arrying contacts are located within 3.2mm (1/8 inch) from de device body. 5. the triacs are triggered by a 15-v (open circuit amplitude) pulse supplied by a generator with the following characteristics : r g = 100 ? , t p(g) = 20 s, t r = 15ns, f = 1 khz.
tic246b, tic246c, TIC246D, tic246e, tic246m, tic246n, tic246s 30/10/2012 comset semiconductors 3 | 3 semiconductors mechanical data case to-220 revised september 2012 ????????? ? information furnished is believed to be ac curate and reliable. however, comset semi conductors assumes no responsibility for the consequences of use of such information nor for any infringem ent of patents or other rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicond uctors? products are not author ized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : main terminal 1 pin 2 : main terminal 2 pin 3 : gate
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